Atomic layer deposition (ALD)

The Atomic Layer Deposition (ALD) technique allows the deposition of atomic layers at low temperatures, the deposition of conformal layers on complex structures with precise thickness control with uniformity across the monolayer and flawless dense films (pinholes). ALD has therefore become an important technique for depositing thin films (Al₂O₃, ZnO, AZO, MeOx,...) on 2D or 3D surfaces of various types (glass, steel, polymer,...). This surface deposition process is used for a variety of applications, such as semiconductor processing, TCO deposition, deposition of high quality dielectrics, barrier layers and deposition of metal oxides on substrates with a high specific surface area for sensor or battery applications.